transistor (npn) feature low noise: nf=1 db (typ),10db(max) complementary to 2sa1162 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 60 v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe v ce =6v, i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c = 100ma, i b =10ma 0.1 0.25 v transition frequency f t v ce =10v, i c = 1ma 80 mhz output capacitance c ob v cb =10v, i e =0,f=1 mhz 2.0 3.5 pf noise figure nf v ce =6v,i c =0.1ma,f=1khz, rg=10k ? 1.0 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 marking lo ly lg ll so t -23 1. base 2. emitter 3. collector 2SC2712 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu
2SC2712 3 www.htsemi.com semiconductor jinyu
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